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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC3258
HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES . Low Collector Saturation Voltage
: VCE(sat) =0.4V(Max.) at I C =3A . High Speed Switching Time : t s tg=l • Ojus(Typ. . Complementary to 2SA1293.
INDUSTRIAL APPLICATIONS Unit in mm
10.3MAX. 03.6±a2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
VCBO
100
V
VCEO
80
V
Vebo
7
V
X
2.5 4
2.
2SC3258 Datasheet
