Datasheet4U Logo Datasheet4U.com

2SC3309 - Silicon NPN Transistor

Key Features

  • . Excellent Switching Times t r =1.0/ts(Max. ), tf=1.0)Us(Max. ) at Ic=0.8A . High Collector Breakdown Voltage : VcEO= ^00V.

📥 Download Datasheet

Datasheet Details

Part number 2SC3309
Manufacturer Toshiba
File Size 126.41 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC3309 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
— SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES: . Excellent Switching Times t r =1.0/ts(Max.), tf=1.0)Us(Max.) at Ic=0.8A . High Collector Breakdown Voltage : VcEO= ^00V MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING 500 UNIT 7.0 0Z.Z-LO.Z —r i / A—?m °. A* CO at C5 X< H o 2 to H I 1 L4 + C125 1 |!| 0.76-0.15 . I.lll — 2.54 ±0.25 » ii 1 1 1.2 a 5 : 1 2.54±Q25 Collector-Emitter Voltage VcEO 400 Emitter-Base Voltage VEBO Collector Current Base Current IB 0.5 Collector Power Ta=25 C 2.0 Dissipation PC Tc=25 C 20 1. BASE 2. COLLECTOR 3.