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2SC3310 - Silicon NPN Transistor

Key Features

  • . Excellent Switching Times : t r =1.0>us(Max. ), tf=1.0/t"s(Max. ) at Ic=4A . High Collector Breakdown Voltage : VcEO=400V.

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Datasheet Details

Part number 2SC3310
Manufacturer Toshiba
File Size 40.14 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC3310 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: 2SC3310 i SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES . Excellent Switching Times : t r =1.0>us(Max.), tf=1.0/t"s(Max. ) at Ic=4A . High Collector Breakdown Voltage : VcEO=400V MAXIMUM RATINGS (Ta=25°c> CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Ta=25 C Tc=25 C SYMBOL VCBO VCEO VEBO ic ICP IB PC RATING 500 400 2.0 30 UNIT INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. —7.0 03.2±O.2 <>< jr T U« (A 3 CO a o a to «3 1.4 + 0.25 Q76-Q15 2.54+0.25 1-2 g . ty s !' H 2T54±0.25 <3c5 + 1 1. BASE 2. COLLECTOR 3.