Toshiba 2SC3474
Silicon NPN Epitaxial Type TRANSISTOR
| Part No. | 2SC3474 |
|---|---|
| Datasheet | 2SC3474 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Epitaxial Type TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
Solenoid DriveAPPLICATIONS
IndustrialAPPLICATIONS
Unit: mm● High DC current gain: hFE = 500 (min) (IC = 400 mA)
● Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 7 2 0.5 1.0 20 150 −55 to 150 Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2002-07-23 2SC3474ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE...
