Toshiba 2SC3515
Silicon NPN Triple Diffused Type Transistor
| Part No. | 2SC3515 |
|---|---|
| Datasheet | 2SC3515 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Triple Diffused Type Transistor |
| Buy | Stock & Price |
APPLICATIONS
Plasma Display, Nixie Tube DriverAPPLICATIONS
Cathode Ray Tube Brightness ControlAPPLICATIONS
Unit: mm● High voltage: VCBO = 300 V, VCEO = 300 V
● Low saturation voltage: VCE (sat) = 0.5 V (max)
● Small collector output capacitance: Cob = 3 pF (typ.)
● Complementary to 2SA1384
● Small flat package
● PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation VCBO 300 V VCEO 300 V VEBO 6 V IC 100 mA IB 20 mA PC 500 PC mW 1000 (Note 1) PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 mmt) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) ma...
