Toshiba 2SC3605
Silicon NPN Epitaxial Planar Type Transistor
| Part No. | 2SC3605 |
|---|---|
| Datasheet | 2SC3605 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Epitaxial Planar Type Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
: l Low Noise Figure, High Gain l NF = 1.1dB, |S21e|2 = 10dB (f = 1GHz) Unit in mmMAXIMUM RATINGS
(Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 20 12 3 80 40 600 150 −55~150 UNIT V V V mA mA mW °C °C MICROWAVE CHARACTERISTICS (Ta = 25°C) JEDEC EIAJ TOSHIBA Weight: 0.21g TO−92 SC−43 2−5F1E CHARACTERISTIC Transition Frequency Insertion Gain Noise Figure SYMBOL TEST CONDITION MIN fT |S21e|2 (1) |S21e|2 (2) NF (1) NF (2) VCE = 10V, IC = 20mA VCE = 10V, IC = 20mA, f = 500MHz VCE = 10V, IC = 20mA, f = 1GHz VCE = 10V, IC = 5mA, f = 1GHz VCE = 10V, IC = 40mA, f = 1GHz 5 — 7.5 — — TYP. 6.5 16 10 1.1 1.8 MAX UNIT — GHz — dB — — dB 3 000707EAA1● TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
