Datasheet Summary
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
High-Current Switching Applications
Unit: mm
- Low collector saturation voltage: VCE (sat) = 0.4 V (max)
- High-speed switching: tstg = 1.0 μs (typ.)
- plementary to...
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
2SC3709A | NPN Transistor |
| 2SC3709 | Silicon NPN Power Transistor |