• Part: 2SC382TM
  • Description: SILICON NPN TRANSISTOR
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 142.51 KB
Download 2SC382TM Datasheet PDF
Toshiba
2SC382TM
FEATURES - High Gain : Gpe=35d B(Typ, ) (f=45MHz) - Excellent Forward AGC Characteristic. 5.1 MAX. Unit in mm 0.55MAX. 0.45 00 00 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL V CBO V CEO V X C h pc T j T stg RATING 40 40 50 -50 250 125 -55^125 UNIT V V V m A m A m W 9C QC ( 1 a t d qi 3 yi 2 ZJ 1. EMITTER 2. COLLECTOR 3. BASE JEDEC - 92 TOSHIBA - 43 2-5F1B Weight : 0.-21g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL...