Toshiba 2SC4203
Silicon Epitaxial Planar Type Transistor
APPLICATIONS
2SC4203 Unit: mm● High transition frequency: fT = 400 MHz (typ.) (VCE = 10 V, IC = 70 mA)
● Low output capacitance: Cob < 5 pF (max) (VCB = 30 V)
● High voltage: VCEO = 150 V
● High power dissipation: PC = 10 W
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulse) Base current Power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 180 150 5 0.3 0.5 0.2 1.0 10 150 −55 to 150 Unit V V V A A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7B2A Weight: 0.36 g (typ.) 1 2002-07-23ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance...