Toshiba 2SC4210
Silicon NPN Epitaxial Type TRANSISTOR
| Part No. | 2SC4210 |
|---|---|
| Datasheet | 2SC4210 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Epitaxial Type TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
● High DC current gain: hFE = 100~320● Complementary to 2SA1621 Unit: mm
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 35 30 5 800 160 200 150 −55~150 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
