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2SC4408 Datasheet PDF

Toshiba 2SC4408

Silicon NPN Transistor

Part No. 2SC4408
Datasheet 2SC4408 Download
Manufacturer
Toshiba
Description Silicon NPN Transistor
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2SC4408 datasheet page 1 preview

APPLICATIONS

Power Switching

APPLICATIONS

2SC4408 Unit: mm
● Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
● High collector power dissipation: PC = 900 mW
● High-speed switching: tstg = 500 ns (typ.)
● Complementary to 2SA1680

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 80 50 6 2 0.2 900 150 −55 to 150 V V V A A mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.36 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropr...
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