2SC505 - SILICON NPN TRANSISTOR

Toshiba

Key Features

High Breakdown Voltage : VCEQ=300V (2SC505) : VCEO=200V (2SC506) 2SC505' 2SC506, Unit in mm S& 9.39 MAX.

2SC505 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC505
Manufacturer	Toshiba
File Size	116.50 KB
Description	SILICON NPN TRANSISTOR
Datasheet	2SC505 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
2SC503	Silicon NPN Epitaxial Type Transistor
2SC504	Silicon NPN Epitaxial Type Transistor
2SC506	SILICON NPN TRANSISTOR
2SC507	SILICON NPN TRANSISTOR
2SC510	SILICON NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High Breakdown Voltage : VCEQ=300V (2SC505) : VCEO=200V (2SC506) 2SC505' 2SC506, Unit in mm S& 9.39 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SC505 2SC506 SYMBOL v CBO RATING 300 200 UNIT V Collector- Emitter Voltage 2SC505 2SC506 Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range V CEO v EBO ic IB pC T i Tstg 300 V 200 3V 1. EMITTER 2. BASE 200 mA 3. COLLECTOR (CASE) 50 mA JEDEC 600 mW TO-39 175 °C TC-5, TB-5B -65M.75 °C TOSHIBA ELECTRICAL CHARACTERISTICS (Ta=25°C) Weight : l.