2SC510 - SILICON NPN TRANSISTOR

Toshiba

Key Features

: High Braekdown Voltage : VcEO=100V (2SC510) : VCE0= 60V (2SC512) Various Uses for Medium Power : I c (Max. ) =1.5A : P c (Max. ) =800mW(Ta=25°C), 8W(Tc=25°C).
Complementary to 2SA510 and 2SA512.

2SC510 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC510
Manufacturer	Toshiba
File Size	120.51 KB
Description	SILICON NPN TRANSISTOR
Datasheet	2SC510 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SC5100	NPN TRANSISTOR	Sanken electric
2SC5100	SILICON POWER TRANSISTOR	SavantIC
2SC5100	NPN Transistor	INCHANGE
2SC5101	NPN TRANSISTOR	Sanken electric
2SC5101	SILICON POWER TRANSISTOR	SavantIC

Other Datasheets by Toshiba

Part Number	Description
2SC512	SILICON NPN TRANSISTOR
2SC5129	Silicon NPN Transistor
2SC519A	SILICON NPN TRANSISTOR
2SC503	Silicon NPN Epitaxial Type Transistor
2SC504	Silicon NPN Epitaxial Type Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SILICON NPN TRIPLE DIFFUSED TYPE (PCT RPOCESS) HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS. 5Tff i2SC512i Unit in mm 09.39MAX. 08.45 MAX FEATURES : High Braekdown Voltage : VcEO=100V (2SC510) : VCE0= 60V (2SC512) Various Uses for Medium Power : I c (Max.) =1.5A : P c (Max.) =800mW(Ta=25°C), 8W(Tc=25°C) • Complementary to 2SA510 and 2SA512. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SC510 2SC512 V CB0 CollectorEmitter Voltage 2SC510 2SC512 V CE0 Emitter-Base Voltage Collector Current Base Current v EB0 ic IB Collector Power Dissipation Ta=25°C Tc=25°C ?C Junction Temperatuer Storage Temperature Range T J T stg RATING 140 100 100 60 5 1.5 300 800 8 175 -65M.