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2SC524 - SILICON NPN TRANSISTOR

Download the 2SC524 datasheet PDF. This datasheet also covers the 2SC522 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Breakdown Voltage : VCEO=100V (2SC522) : V CE0= 60V (2SC524).
  • Useful attachment for Heat sink.
  • Various Uses for Medium Power : I C=1.5A (Max. ), P C=10W (Max. ) gfe.39MAX SZfe.5MAX Unit in mm 00.45 il 11 l - . ^. ,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SC522-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SC524
Manufacturer Toshiba
File Size 122.23 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 2SC524 Datasheet

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Other Datasheets by Toshiba

Part Number Description
2SC5200N NPN Transistor
2SC5208 Silicon NPN Transistor
2SC520A SILICON NPN TRANSISTOR
2SC521A SILICON NPN TRANSISTOR
2SC522 SILICON NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SC524, HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=100V (2SC522) : V CE0= 60V (2SC524) • Useful attachment for Heat sink. • Various Uses for Medium Power : I C=1.5A (Max.), P C=10W (Max.) gfe.39MAX SZfe.5MAX Unit in mm 00.45 il 11 l - . ^. , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector- Base Voltage 2SC522 2SC524 Collector- Emitter Voltage Emitter-Base Voltage 2SC522 2SC524 Collector Current Base Current Collector Power Dissipation (Tv=?s°r) Junction Temperature Storage Temperature Range SYMBOL VCBO v CE0 VEBO ic IB PC Tj T stg RATING 140 100 100 60 5 1.5 300 10 175 -65VL75 UNIT V V V A mA W °C °C 1. EMITTER 2. BASE 3.