Toshiba 2SC5319
NPN TRANSISTOR
| Part No. | 2SC5319 |
|---|---|
| Datasheet | 2SC5319 Download |
| Manufacturer |  Toshiba |
| Description | NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
● Low noise figure: NF = 1.3dB (f = 2 GHz)● High gain: ⎪S21e⎪2 = 11.5dB (f = 2 GHz)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.5 V Collector current IC 20 mA Base current IB 10 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C １，３ EMITTER Storage temperature range Tstg −55 to 125 °C ２ COLLECTOR ４ BASE Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ― reliability significantly even if the operating conditions (i.e. JEITA ― operating temperature/current/voltage, etc.) are within the absolute maximum ratings. TOSHIBA 2-2K1A Please design the appropriate reliability upon reviewing the Weight: 6 mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
