Toshiba 2SC5352
NPN TRANSISTOR
APPLICATIONS
High-Speed DC-DC ConverterAPPLICATIONS
2SC5352 Unit: mm● Excellent switching times: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 4 A)
● High breakdown voltage: VCEO = 400 V
MAXIMUM RATINGS
(Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 400 7 10 15 5 80 150 −55 to 150 Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight: 4.7 g (typ.)ELECTRICAL CHARACTERISTICS
(Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 480 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 A IC = 4 A, IB = 0.5 A IC = 4 A, IB = 0.5 A Min Typ.