Toshiba 2SC5376
NPN TRANSISTOR
| Part No. | 2SC5376 |
|---|---|
| Datasheet | 2SC5376 Download |
| Manufacturer |  Toshiba |
| Description | NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
For Muting and SwitchingAPPLICATIONS
2SC5376 Unit: mm● Low collector saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA
● High collector current: IC = 400 mA (max)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 400 mA Base current IB 50 mA Collector power dissipation Junction temperature Storage temperature range PC 100 mW Tj 125 °C Tstg −55 to 125 °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2H1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 2.4 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba...
