Toshiba 2SC5404
NPN TRANSISTOR
| Part No. | 2SC5404 |
|---|---|
| Datasheet | 2SC5404 Download |
| Manufacturer |  Toshiba |
| Description | NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
Unit: mm l High Voltage : VCBO = 1500 V l Low Saturation Voltage : VCE (sat) = 3 V (Max.) l High Speed : tf = 0.15 µs (Typ.) l Collector Metal (Fin) is Fully Covered with Mold Resin.MAXIMUM RATINGS
(Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1500 600 5 9 18 4.5 50 150 −55~150 UNIT V V V A A W °C °CELECTRICAL CHARACTERISTICS
(Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut−off Current Emitter Cut−off Current Emitter−Base Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5...
