Toshiba 2SC5422
NPN TRANSISTOR
APPLICATIONS
l High Voltage l Low Saturation Voltage l High Speed : VCBO = 1700 V : VCE (sat) = 3 V (Max.) : tf = 0.15 µs (Typ.) Unit: mmMAXIMUM RATINGS
(Tc = 25°C) CHARACTERISTIC SYM Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC I Pulse BOL VCBO VCEO VEBO C RATING 1700 V 600 5 15 30 7.5 A 200 150 ° −55~150 ° UNIT V V A ICP IB PC Tj Tstg JEDEC JEITA ― ― 2-21F2A W C C TOSHIBA Weight: 9.75 g (typ.)ELECTRICAL CHARACTERISTICS
(Tc = 25°C) CHARACTERISTIC S Collector Cut−off Current Emitter Cut−off Current Emitter−Base Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time YMBOL ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE =...