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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5886A
High-Speed Switching Applications DC/DC Converter Applications
2SC5886A
Unit: mm
• High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) • High-speed switching: tf = 95 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEX VCEO VEBO
IC ICP IB
Pc
Tj Tstg
120
V
100 V
50
9
V
5 A
10
0.5
A
1 W
20
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.
2SC5886A Datasheet
