2SC5886A
TOSHIBA Transistor Silicon NPN Epitaxial Type
High-Speed Switching Applications DC/DC Converter Applications
Unit: mm
- High DC current gain: h FE = 400 to 1000 (IC = 0.5 A)
- Low collector-emitter saturation: VCE (sat) = 0.22 V (max)
- High-speed switching: tf = 95 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEX VCEO VEBO
IC ICP IB
Pc
Tj Tstg
100 V
5 A
1 W
°C
- 55 to 150
°C
JEDEC
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JEITA
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