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2SD1208 - NPN Transistor

Key Features

  • . Excellent Wide Safe Operating Area (lOOW. Sec at Tc=25°C . Included Abalanche Diode : Vz=60±15V . High DC Current Gain : hFE=2000 ~ 20000 . Darlington Connected Type. Unit in mm 025.0 MAX. 02 1.0 MAX tt T3 +ao9 t01.0.
  • 0.03 A:.

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Datasheet Details

Part number 2SD1208
Manufacturer Toshiba
File Size 159.58 KB
Description NPN Transistor
Datasheet download datasheet 2SD1208 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: 33 SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER REGULATOR FOR LINE OPERATED TV. FEATURES . Excellent Wide Safe Operating Area (lOOW.Sec at Tc=25°C . Included Abalanche Diode : Vz=60±15V . High DC Current Gain : hFE=2000 ~ 20000 . Darlington Connected Type. Unit in mm 025.0 MAX. 02 1.0 MAX tt T3 +ao9 t01.0— 0.03 A: MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO Collector Current (Continous) IC Collector Current (Peak) ICP Collector Power Dissipation (Tc=25°C) Junction Temperature PC Storage Temperature L stg EQUIVALENT CIRCUIT COLLECTOR RATING 60±15 60+15 UNIT 20 100 150 -65-150 O EMITTER 3Q2±0.2 1. BASE 2.