Toshiba 2SD1408
Silicon NPN Transistor
2SD1408 Specifications
- Max Collector Current : 4A
- Terminals : 3
- Collector Emitter Voltage : 80V
Source:
Octopart
APPLICATIONS
.FEATURES
. High Power Dissipation : Pc= ?5W (Tc=25 °C) . Good Linearity of hEE . Complementary to 2SB1017 . Recommended for 20— 25W High Fidelity Audio Frequency Amplifier Output Stage.MAXIMUM RATINGS
(Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VcEO v EBO ic IB PC T j T stg RATING 80 80 5 4 0.4 25 150 -55^150 UNIT V V V A A W °C °C Unit in mm 10.3MAX,. r^ 03.2±O.2 J j I"ri A n i) ::: r5 N 1 1.4 + 0.25 0.76-0.15 2.54±a25 1.2 m g IIt : 2.54±0.25 mo cicj -H in -1 r It 1 1- n i\ 3 >, X! < <D 1 1. BASE 2. COLLECTOR 3. EMITTER JEDEC - EIAJ TOSHIBA 2-10L1A Weight 2●lg
ELECTRICAL CHARACTERISTICS
(Ta=25 C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage ICBO lEBO V CB=80V, Ie=0 V E B=5V, I C =0 V (BR) CEO I c=...