2SD1428 - Silicon NPN Transistor

Toshiba

Key Features

. High Voltage : VcBO=1500V . Low Saturation Voltage . High Speed : V C E(sat)=5V(Max. ) (I C=5A, I B=1A) : tf=l. 0/«s(Max. . Built-in Damper Type . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 03.6±Q2.

2SD1428 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SD1428
Manufacturer	Toshiba
File Size	107.77 KB
Description	Silicon NPN Transistor
Datasheet	2SD1428 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: ) SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage : VcBO=1500V . Low Saturation Voltage . High Speed : V C E(sat)=5V(Max.) (I C=5A, I B=1A) : tf=l. 0/«s(Max. . Built-in Damper Type . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 03.6±Q2 MAXIMUM RATINGS (Tc=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 1500 Collector-Emitter Voltage Emitter-Base Voltage v CEO 600 VEBO Collector Current ic Emitter Current IE -6 Collector Power Dissipation (Tc=25°C) 80 Junction Temperature 150 Storage Temperature Range [ stg -55-150 EQUIVALENT CIRCUIT BASEO- COLLECTOR 3 1 -y/» ^50Q(TYP. ) EMITTER ELECTRICAL CHARACTERISTICS (Tc=25°C) 1. BASE 2. COLLECTOR (HEAT SINK) 3.