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2SD1460 - Silicon NPN Transistor

Datasheet Summary

Features

  • . High Collector Current : Ic=30A . High DC Current Gain : hFE=1000(Min. (V C e=5V, Ic=20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm 025.OMAX.

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Datasheet Details

Part number 2SD1460
Manufacturer Toshiba
File Size 92.60 KB
Description Silicon NPN Transistor
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Full PDF Text Transcription

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:) SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . High Collector Current : Ic=30A . High DC Current Gain : hFE=1000(Min. (V C e=5V, Ic=20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm 025.OMAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL v CBO VCEO RATING 100 100 UNIT V Emitter-Base Voltage VEBO Collector Current ic 30 Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT IB PC L stg 200 150 -65-150 COLLECTOR 1. BASE 2.
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