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2SD552 - NPN Transistor

Key Features

  • High Power Dissipation : Pc=150W (Tc=25°C).
  • High Collector Current : I C=15A.
  • High Voltage : VCEO=180V.
  • Complementary to 2SB552.

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Datasheet Details

Part number 2SD552
Manufacturer Toshiba
File Size 110.03 KB
Description NPN Transistor
Datasheet download datasheet 2SD552 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD552 SILICON NPN TRIPLE DIFFUSED TYPE HGIH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES • High Power Dissipation : Pc=150W (Tc=25°C) • High Collector Current : I C=15A • High Voltage : VCEO=180V • Complementary to 2SB552. INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current VcBO v CEO VEBO ic Base Current Collector Power Dissipation^,.,, . Junction Temperature IB PC Tj Storage Temperature Range T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) RATING 220 180 5 15 3 150 150 -65VL50 UNIT V V V A A W °C °C 1. BASE 2.