2SD634
2SD634 is NPN Transistor manufactured by Toshiba.
FEATURES
- High DC Current Gain : h FE=2000 (Min.) (Vc E=3V, Ic=3A)
- Low Saturation Voltage : v CE(sat) =1
- 5v (Max.), (I C =3A)
- plementary to 2SB673, 2SB674, and 2SB675,
INDUSTRIAL APPLICATIONS Unit in mm
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL RATING
Collector-Base
2SD633
Voltage
2SD634 2SD635
'CBO
80 60
Collector- Emitter
2SD633
Voltage
Emitter-Base Voltage
2SD635
Continuous Collector Current
Contunuous Base Current
Collector Power Dissipation (Tc=25°c:
Junction Temperature
VEBO ic IB PC
80 60
0.2 40 150
Storage Temperature Range
Tstg -55VL50
UNIT °C
EQUIVALENT CIRCUIT
.COLLECTOR
- ~5k1 wv,
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