2SD819
2SD819 is NPN Transistor manufactured by Toshiba.
FEATURES
- High Voltage . Low Saturation Voltage
High Speed
V C BO=1500V V CE(sat)=4V (Typ.) (I C =3A, I B =0.8A) tf =1.0ys (Max.)
(I CP =3A, I B i(end)=0-8A) Glass Passivated Collector-Base Junction.
Unit in mm
;ZS25.0MAX
<
X- Gfe LOMAX.
^^"CO
1-
TT+H
+ 0.09
04>.ti- 0.03
1 j
|i1! 1 l
30.2 ±0.2 16.9±0.2 to d
MAXIMUM RATINGS (Ta=25°c)
CHARACTERISTICS Collector Base Voltage Collector Emitter Voltage Emitter-Base Voltage
Collector Current Emitter Current Collector Power Dissipation
(Tc=25°C) Junction Temperature
Storage Temperature Range
SYMBOL v CBO v CEO VEBO ic IE
PC T
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current
SYMBOL
ICB0 l EBO
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
Transition Frequency Collector Output Capacitance Fall Time h FE v CE(sat)
VBE(sat) f T Cob...
