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2SD867 - NPN Transistor

Key Features

  • High Power Dissipation : F c =100W(Tc=25°C).
  • High Collector Current : Ic=10A ' Low Saturaton Voltage : VcE(sat)=0-5V (Typ. ) (Ic=5A).

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Datasheet Details

Part number 2SD867
Manufacturer Toshiba
File Size 117.63 KB
Description NPN Transistor
Datasheet download datasheet 2SD867 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD867 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATONS. FEATURES • High Power Dissipation : F c =100W(Tc=25°C) • High Collector Current : Ic=10A ' Low Saturaton Voltage : VcE(sat)=0-5V (Typ. ) (Ic=5A) INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO v CEO v EBO ic IB pc Tj Storage Temperature Range Tstg ELECTRICAL CHARACTERISTICS (Ta=25°c) 130 110 7 10 5 100 175 -65VL75 V V V A A W °c °C 1. BASE 2. EMITTER COLLECTOR (CASE) TO-204MA/TO-3 TC — 3, TB 21D 1 A Mounting Kit No.