2SD867
2SD867 is NPN Transistor manufactured by Toshiba.
FEATURES
- High Power Dissipation : F c =100W(Tc=25°C)
- High Collector Current : Ic=10A ' Low Saturaton Voltage : Vc E(sat)=0-5V (Typ. ) (Ic=5A)
INDUSTRIAL APPLICATIONS Unit in mm
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTICS
SYMBOL RATING UNIT
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
Junction Temperature
VCBO v CEO v EBO ic
IB pc Tj
Storage Temperature Range
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25°c)
130 110
100 175 -65VL75
V V V A A W
°c
°C
1. BASE 2. EMITTER
COLLECTOR (CASE)
TO-204MA/TO-3 TC
- 3, TB
21D 1 A
Mounting Kit No. AC73 Weight : 12. 6g
CHARACTERISTIC Collector Cut-off Current
Emitter Cut-off Current Collector-Emitter Breakdown Voltage
SYMBOL ICBO l EBO
V (BR) CEO
TEST CONDITION VCB=130V, I E=0...
