2SH20 - SILICON P EMITTER PLANAR TYPE TRANSISTOR

Toshiba

Key Features

High Oscillation Output Voltage : V0B1 =3V (Min. ).
Low Emitter Reverse Current : I EC =0.1yA (Max. ).
Wide Oscillation Area : Ip=3.5yA (Max. ) (2SH20) IV=6mA (Min. ) Unit in mm 05.8UAX. 04.95MAX. gfe-5^.

2SH20 silicon p emitter planar type transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SH20
Manufacturer	Toshiba
File Size	141.70 KB
Description	SILICON P EMITTER PLANAR TYPE TRANSISTOR
Datasheet	2SH20 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON P EMITTER PLANAR TYPE (INDUSTRIAL APPLICATIONS) 2SH20 2SH21 RELAXATION OSCILLATOR, SCR TRIGGER AND TIMER APPLICATIONS. FEATURES • High Oscillation Output Voltage : V0B1 =3V (Min.) • Low Emitter Reverse Current : I EC =0.1yA (Max.) • Wide Oscillation Area : Ip=3.5yA (Max. ) (2SH20) IV=6mA (Min.) Unit in mm 05.8UAX. 04.95MAX. gfe-5^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTICS Base 2 - Base 1 Voltage Base 1 - Emitter Voltage Base 2 - Emitter Voltage Peak Emitter Current Emitter Current Allowable Power Dissipation Junction Temperature Storage Temperature Range SYMBOL V 32B10 VB1EO RATING 55 60 Vb2EO 60 lE(peak) 1 IE 50 P 250 T J Tstg 150 -65^150 UNIT V V V A mA mW °C °C 1. BASE 1 2. EMITTER 3. BASE 2 (CASE) TO — 1? — — TC 7 , T'B 8C Weight : 1.