2SJ115 - SILICON P-CHANNEL MOS FET

Toshiba

Key Features

. High Breakdown Voltage : VDS S=-160V . High Forward Transfer Admitt ance : lYf s l=2.0S (Typ. ) . Complementary to 2SK405 Unit in mm 15.9MAX. 03.2±O.2 . o /o m /"«.
J w Q o - X< yS ^.
-H oo jl rf. ? i i 2.C ±a3 os IO 1-1 SO + 0.3 c5 1.0-0.2 5 j, 5.45 + Q. f i 5 4 ;=>_!: 0.2.

2SJ115 silicon p-channel mos fet by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SJ115
Manufacturer	Toshiba
File Size	109.96 KB
Description	SILICON P-CHANNEL MOS FET
Datasheet	2SJ115 Datasheet

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Full PDF Text Transcription (Reference)

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SILICON P CHANNEL MOS TYPE 2SJ115 AUDIO FREQUENCY POWER AMP-LI FIE R APPLICATION. FEATURES: . High Breakdown Voltage : VDS S=-160V . High Forward Transfer Admitt ance : lYf s l=2.0S (Typ.) . Complementary to 2SK405 Unit in mm 15.9MAX. 03.2±O.2 . o /o m /"«— J w Q o - X< yS ^ — -H oo jl rf. ? i i 2.C ±a3 os IO 1-1 SO + 0.3 c5 1.0-0.2 5 j, 5.45 + Q.f i 5 4 ;=>_!: 0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range SYMBOL VdSS vgss id pd Teh Tstg RATING -160 ±20 -8 100 150 -55-150 UNIT V V A W °C °C 5 +1 CO 1 r-i —' TLlL4i- h a -?Y-^ n_. 1i 1. GATE 2. DRAIN (HEAT SINK) 5.