Toshiba 2SJ144
P-Channel MOSFET
| Part No. | 2SJ144 |
|---|---|
| Datasheet | 2SJ144 Download |
| Manufacturer |  Toshiba |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
Analog SwitchAPPLICATIONS
Constant CurrentAPPLICATIONS
Impedance ConverterAPPLICATIONS
Unit: mm● High breakdown voltage: VGDS = 50 V (min)
● High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
● Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA)
● Small package
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 50 −10 100 125 −55~125 Unit V mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
