Toshiba 2SJ200
P-Channel MOSFET
| Part No. | 2SJ200 |
|---|---|
| Datasheet | 2SJ200 Download |
| Manufacturer |  Toshiba |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Gate−source voltage Drain current (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VGSS ID PD Tch Tstg −180 V ±20 V −10 A 120 W 150 °C −55~150 °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-16 2SJ200ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristics Symbol Test Condition Min Typ.
