2SJ681 Datasheet PDF

APPLICATIONS

z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) (VGS = −10 V) z High forward transfer admittance: |Yfs| = 5.0 S (typ.) z Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 Unit: mm 0.6 MAX. 1.6 5.5 ± 0.2 0.9 1.1 ± 0.2 0.6 MAX. 4.1 ± 0.2 5.7

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse(Note 1) Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalenche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg −60 V −60 V ±20 V −5 A −20 A 20 W 40.5 mJ −5 A 2 mJ 150 °C −55 to 150 °C 2.3 2.3 2.3 ± 0.2 123 0.8 MAX. 1.1 MAX. 0.6 ± 0.15 0.6 ± 0.15 1. GATE 2. DRAIN （HEAT SINK） 3. SOURCE 2 1 3 JEDEC ― JEITA ― TOSHIBA 2-7J2B Weight: 0...