2SJ90
FEATURES
. 1 Chip Dual Type. . High l Yf s l : I Yf s l =22ms(Typ.
(Vd S=-10V, VGS=0,f=lk Hz, l DSS=-3m A) . Good Pair Characteristics :
1 VGS1-VGS2 I =30m V (Max . (Vds="10V , l D=-lm A) . Very Low Noise : NF=0. 5d B(Typ.
(Vds=-1°v > l D=-lm A, Rg=lkfi, f=lk Hz) . Very High Input Impedance : l GSS=10n A(Max.
(VGS=30V, VDS=0)
Unit in mm
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation
SYMBOL VGDS IG PD
RATING 30 10
UNIT m A n W/UNr:
1. DRAIN 1 2. GATE 1 a SOURCE 1 4. SUBSTRATE
JEDEC Toshiba
5 SOURCE 2 6 GATE 2 7. DRAIN 2
2-18A1A
Junction Temperature
Weight: 0.7g
Storage Temperature Range
T stg -55-125
ELECTRICAL CHARACTERISTICS
(Ta =25"C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
Gate Leakage Current
IGSS VG S=30V, VD S=0
Gate-Drain Breakdown Voltage V(BR)GDS vds=o, ig=ioom
Drain Current
Gate-Source Cut-off Voltage Forward Transfer Admittance
Forward Transfer Admittance Ratio Differential Gate-Source...
