Toshiba 2SK1061
N-CHANNEL MOS TRANSISTOR
| Part No. | 2SK1061 |
|---|---|
| Datasheet | 2SK1061 Download |
| Manufacturer |  Toshiba |
| Description | N-CHANNEL MOS TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
Analog SwitchAPPLICATIONS
InterfaceAPPLICATIONS
2SK1061 Unit: mm● Excellent switching times: ton = 14 ns (typ.)
● High forward transfer admittance: |Yfs| = 100 mS (min)
● Low on resistance: RDS (ON) = 0.6 Ω (typ.)
● Enhancement-mode
● Complementary to 2SJ167
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 60 V Gate-source voltage VGSS ±20 V Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range ID IDP PD Tch Tstg 200 800 300 150 −55~150 mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-4E1E Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.13 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliab...
