2SK146 - Silicon N-Channel Transistor

Toshiba

Key Features

High 1 y f s 1 : iyf s l=40mS(Typ. ) (VDS =10V, V G s=0, lDSS=5mA).
Excellent Pair Characteristics : |VGS1 -VGS2|= 20mV (Max. ) (VDS =10V, I D=5mA).
High Breakdown Voltage : VGr)g=-40V.
Low Noise : NF=1.0dB (Typ. ) (VDS =10V, I D=5mA, Rg=100n, f=lkHz).
High Input Impedance : lQgg=-lnA(Max. ) (VG s=-30V) X d CO d H V 1 2 3/.
High Drain Power Dissipation : PD=600mW.
2 \ 4 5 6 JJ.

2SK146 silicon n-channel transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK146
Manufacturer	Toshiba
File Size	164.45 KB
Description	Silicon N-Channel Transistor
Datasheet	2SK146 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SK1460	N-Channel Silicon MOSFET	Sanyo Semicon Device
2SK1460	N-Channel MOSFET Transistor	Inchange Semiconductor
2SK1460LS	N-Channel Silicon MOSFET	Sanyo Semiconductor Corporation
2SK1461	N-Channel Silicon MOSFET	Sanyo Semicon Device
2SK1461	N-Channel MOSFET Transistor	Inchange Semiconductor

Other Datasheets by Toshiba

Part Number	Description
2SK147	Silicon N-Channel MOSFET
2SK1487	Transistor
2SK1078	MOSFET
2SK1079	N-Channel FET
2SK108	Silicon P-Channel FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

: SILICON N CHANNEL JUNCTION TYPE 2SK146 LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS. DRAIN MARK Unit in mm 6.4MAX. FEATURES • High 1 y f s 1 : iyf s l=40mS(Typ.) (VDS =10V, V G s=0, lDSS=5mA) • Excellent Pair Characteristics : |VGS1 -VGS2|= 20mV (Max.) (VDS =10V, I D=5mA) • High Breakdown Voltage : VGr)g=-40V • Low Noise : NF=1.0dB (Typ.) (VDS =10V, I D=5mA, Rg=100n, f=lkHz) • High Input Impedance : lQgg=-lnA(Max. ) (VG s=-30V) X d CO d H V 1 2 3/ • High Drain Power Dissipation : PD=600mW * 2 \ 4 5 6 JJ MAXIMUM RATINGS (Ta=25 Q C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VGDS IG L stg RATING -40 10 600x2 125 -55^125 UNIT V mA mW 1. DRAIN 1 2. GATE 1 3.