Part 2SK146
Description Silicon N-Channel Transistor
Category Transistor
Manufacturer Toshiba
Size 164.45 KB
Toshiba
2SK146

Overview

  • High 1 y f s 1 : iyf s l=40mS(Typ.) (VDS =10V, V G s=0, lDSS=5mA)
  • Excellent Pair Characteristics : |VGS1 -VGS2|= 20mV (Max.) (VDS =10V, I D=5mA)
  • High Breakdown Voltage : VGr)g=-40V
  • Low Noise : NF=1.0dB (Typ.) (VDS =10V, I D=5mA, Rg=100n, f=lkHz)
  • High Input Impedance : lQgg=-lnA(Max. ) (VG s=-30V) X d\ CO d H V 1 2 3/
  • High Drain Power Dissipation : PD=600mW * 2 \\ 4 5 6 JJ