Toshiba 2SK2232
Silicon N-Channel MOSFET
| Part No. | 2SK2232 |
|---|---|
| Datasheet | 2SK2232 Download |
| Manufacturer |  Toshiba |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.) z High forward transfer admittance : |Yfs| = 16 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 60 60 ±20 25 100 35 156 25 3.5 150 −55 to 150 V V V A A W mJ A mJ °C °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease i...
