Datasheet4U Logo Datasheet4U.com

2SK240 - Silicon N-Channel Transistor

Key Features

  • Recommended for first stages of EQ Amplifiers.
  • High |y fs l : lyf s l=22mS(Typ. ) (VDS =10V, VGS =0, I DS s=3mA).
  • Excellent Pair Characteristics : I VGS1 -VGS2 |=20mV (Max. ) (VDS =10V, I D =lmA).
  • High Breakdown Voltage : 'GDS =-40V (Min. ).
  • Low Noise en =0.95nV//Hz (Typ. ) (VDS =10V, lD=lmA, f=lkHz).
  • High Input Impedance : lGSS="lnA(Max. ) (vGS =-30V).
  • Complementary to 2SJ75.

📥 Download Datasheet

Datasheet Details

Part number 2SK240
Manufacturer Toshiba
File Size 127.37 KB
Description Silicon N-Channel Transistor
Datasheet download datasheet 2SK240 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2400 Silicon N-Channel MOSFET Toshiba Semiconductor
2SK2401 Silicon N-Channel MOSFET Toshiba Semiconductor
2SK2401 N-Channel MOSFET Transistor Inchange Semiconductor
2SK2402 N-Channel MOSFET Transistor Inchange Semiconductor
2SK2405 N-Channel Silicon MOSFET Sanyo Semicon Device

Other Datasheets by Toshiba

Part Number Description
2SK2057 N-Channel MOSFET
2SK2078 N-Channel MOSFET
2SK2089 N-Channel MOSFET
2SK2146 Transistor
2SK2228 Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
: 2SK240 SILICON N CHANNEL JUNCTION TYPE LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES • Recommended for first stages of EQ Amplifiers. • High |y fs l : lyf s l=22mS(Typ.) (VDS =10V, VGS =0, I DS s=3mA) • Excellent Pair Characteristics : I VGS1 -VGS2 |=20mV (Max.) (VDS =10V, I D =lmA) • High Breakdown Voltage : 'GDS =-40V (Min.) • Low Noise en =0.95nV//Hz (Typ.) (VDS =10V, lD=lmA, f=lkHz) • High Input Impedance : lGSS="lnA(Max.) (vGS =-30V) • Complementary to 2SJ75. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VGDS IG PD Ti Tstg RATING -40 10 400x2 125 -55^125 UNIT V mA mW °C °C S4MAX.