2SK324 - N-Channel Transistor

Toshiba

Key Features

. High Breakdown Voltage : V(br)dSS=400V . High Forward Transfer Admittance : 1 Yf s l =5S(Typ. . Low Leakage Current : I GS s=±100nA(Max. ) @ VGs=±20V lDSS=lmA(Max. ) @ VDs=400V . Enhancement-Mode : V t h=l . 5 ~3. 5V @ lD=lmA MAX MUM.

2SK324 n-channel transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK324
Manufacturer	Toshiba
File Size	132.22 KB
Description	N-Channel Transistor
Datasheet	2SK324 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON N CHANNEL MPS TYPE (fr-MOS) 2SK324 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm FEATURES . High Breakdown Voltage : V(br)dSS=400V . High Forward Transfer Admittance : 1 Yf s l =5S(Typ. . Low Leakage Current : I GS s=±100nA(Max. ) @ VGs=±20V lDSS=lmA(Max.) @ VDs=400V . Enhancement-Mode : V t h=l . 5 ~3. 5V @ lD=lmA MAX MUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range SYMBOL VdSX VgSS ID I DP ?D Tch [stg_ RATING 400 ±20 10 15 120 150 -65-150 UNIT V °C °C 1. GATE 2.