Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSV)
High Power Amplifier Application
Unit: mm High breakdown voltage: VDSS = 180V plementary to 2SJ618
Maximum Ratings (Ta = 25°C)
Characteristics Drain- source voltage Gate- source voltage Drain current DC (Note ) Symbol VDSS VGSS ID IDP PD Tch Tstg Rating 180 ±12 10 30 130 150
- 55~150 Unit V V A A W °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
Pulse (Note )
Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range
Note:
Ensure that the channel temperature does not exceed 150°C.
JEDEC JEITA
― ― 2-16C1B
Thermal Characteristics
Characteristics Thermal...
