2SK3543
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Switching Regulator and DC-DC Converter Applications Motor Drive Applications
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- - Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance: |Yfs| = 1.3 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k W) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 2 5 30 103 2 3 150 -55 to150 Unit V V V A W m J A m J °C °C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― SC-67 2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance,...
