2SK355 - N-Channel Transistor

Toshiba

Key Features

. Low Drain-Source ON Resistance : RDS(0N) = 0.12O(Typ. . High Forward Transfer Admittance : 1 Yf s | =6S(Typ. . Low Leakage Current : lGSS =il0 °nA(Max. ) @ Vq$=±20V . Enhancement -Mode I DSS=lmA(Max. ) @ VD S=150V : Vfh=l . 5 ~ 3. 5V @ lQ=lmA.

2SK355 n-channel transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK355
Manufacturer	Toshiba
File Size	40.95 KB
Description	N-Channel Transistor
Datasheet	2SK355 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON N CHANNEL MOS TYPE (7T-MOS) 2SK355 ° HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES . Low Drain-Source ON Resistance : RDS(0N) = 0.12O(Typ. . High Forward Transfer Admittance : 1 Yf s | =6S(Typ. . Low Leakage Current : lGSS =il0 °nA(Max. ) @ Vq$=±20V . Enhancement -Mode I DSS=lmA(Max.) @ VD S=150V : Vfh=l . 5 ~ 3. 5V @ lQ=lmA INDUSTRIAL APPLICATIONS Unit in mm ^2&0MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage SYMBOL VDSX RATING 150 UNIT Gate-Source Voltage VgSS ±20 Drain Current DC Pulse Drain Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range ID Idp Teh T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) 12 40 120 150 -65-150 1. GATE 2.