2SK3561
2SK3561 is Silicon N-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Switching Regulator Applications
- Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.)
- High forward transfer admittance: |Yfs| = 6.5 S (typ.)
- Low leakage current: IDSS = 100 μA (VDS = 500 V)
- Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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