Toshiba 2SK3880
Silicon N-Channel MOSFET
| Part No. | 2SK3880 |
|---|---|
| Datasheet | 2SK3880 Download |
| Manufacturer |  Toshiba |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
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● Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100μA (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 800 800 ±30 6.5 19.5 80 375 6.5 8 150 −55~150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-16F1B 2 Weight: 5.8 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.56 41.6 Unit 1 °C/W °C/W 3 Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
