The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SK3911
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI)
2SK3911
Switching Regulator Applications
Unit: mm
• Small gate charge: Qg = 60 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS = 500 μA (VDS = 600 V) • Enhancement model: Vth = 2.0 to 4.
2SK3911 Datasheet
