Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI)
Switching Regulator Applications
Unit: mm
- Small gate charge: Qg = 60 nC (typ.)
- Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.)
- High forward transfer admittance: |Yfs| = 11 S (typ.)
- Low leakage current: IDSS = 500 μA (VDS = 600 V)
- Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1...
