2SK4033
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)
5.2 ± 0. 2 1.5 ± 0.2
Chopper Regulator, DC-DC Converter and Motor Drive Applications z 4-V gate drive
1.2 MAX.
Unit: mm
6.5 ± 0.2 0.6 MAX.
5.5 ± 0.2 z High forward transfer admittance: z Low leakage current: z Enhancement mode:
|Yfs| = 6.0 S (typ.)
IDSS = 100 μA (max) (VDS = 60 V) Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 m A)
9.5 ± 0.3 z Low drain- source ON-resistance:
RDS (ON) = 0.07 Ω (typ.)
1.1 ± 0.2 0.6 MAX.
0.8 MAX. 0.6 ± 0.15 1.05 MAX. 1 2 3 2.3 ± 0. 2
Characteristic Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg
Rating 60 60 ±20 5 20 20 40.5 5 2 150
- 55 to 150
Unit V V V A A W m J A m J °C °C
2.3 ± 0.15 2.3 ± 0. 15
0.1 ± 0. 1
Absolute Maximum Ratings (Ta = 25°C)
2 1
1. 2.
GATE DRAIN （HEAT SINK） 3. SOURSE
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single-pulse...
