2SK72 - Silicon N-Channel Transistor

Toshiba

Key Features

Ultra Low Noise: NF=0.5dB (Typ. ) at Rg=100kft, f=120Hz vN(p-p) =1 - 7 ^ v ( T yP-) at Rg =10kft, Jf=5^50Hz.
High Gain : j f | =1. 5^6. 5mS.
Low Offset : | GS1 -VGS2 | =10mV (Max. ).
Good Tracking: A Vgs1-Vgs2| /JTa=30yV/°C (Typ. ) |.
High Input Resistance: I G=-100pA (Max. ) at VDS=10V, I D=400yA.
Similar characteristics as 2SK48 j2fe.40MAX Unit in mm ^gfr-^i 0.86MAX. . 1. SOURCE CU Z. DRAIN (1) 3. GATE (1) 4. SOURCE (2) 5. DRAIN (2} 6. G.

2SK72 silicon n-channel transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK72
Manufacturer	Toshiba
File Size	55.03 KB
Description	Silicon N-Channel Transistor
Datasheet	2SK72 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK72 yV s . SILICON N CHANNEL JUNCTION DUAL TYPE (COMPLETELY SEPARATED TYPE) DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES: • Ultra Low Noise: NF=0.5dB (Typ.) at Rg=100kft, f=120Hz vN(p-p) =1 - 7 ^ v ( T yP-) at Rg =10kft, Jf=5^50Hz • High Gain : j f | =1. 5^6. 5mS • Low Offset : | GS1 -VGS2 | =10mV (Max.) • Good Tracking: A Vgs1-Vgs2| /JTa=30yV/°C (Typ.) | • High Input Resistance: I G=-100pA (Max.) at VDS=10V, I D=400yA • Similar characteristics as 2SK48 j2fe.40MAX Unit in mm ^gfr-^i 0.86MAX. . 1. SOURCE CU Z. DRAIN (1) 3. GATE (1) 4. SOURCE (2) 5. DRAIN (2} 6. GATE (2) 7.