3SK38A - Silicon N-Channel Transistor

Toshiba

Key Features

: Ultra Small Drain-Source Thermoelectromotive Force : Vemf = 1.3 uV/°C (Typ . High Resistance Ratio : r DS (ON) = 50ffi(Max. ) at. Vg1S=3V : r DS (OFF)= 100WQ(Min. ) at. Vc i S =OV Low Gate Capacitance and Offset : CD = 2.5pF(Max. ), J G =0. 3pF(Max. Contains Gates Protection Diode. 0S .39! 1AX ^Zfe.45MAX. Unit in mm 1O in 01.3 S5 1 f 19.01/ 00. 50 1fH T I I nz>o.4t> 1 l| r~ P l.

3SK38A silicon n-channel transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	3SK38A
Manufacturer	Toshiba
File Size	125.95 KB
Description	Silicon N-Channel Transistor
Datasheet	3SK38A Datasheet

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Full PDF Text Transcription (Reference)

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3SK38A C) ) 4 SILICON N CHANNEL MOS TYPE (INDUSTRIAL APPLICATIONS) CHOPPER CIRCUIT APPLICATIONS. SWITCHING CIRCUIT APPLICATIONS. IMPEDANCE CONVERTER APPLICATIONS. FEATURES : Ultra Small Drain-Source Thermoelectromotive Force : Vemf = 1.3 uV/°C (Typ . High Resistance Ratio : r DS (ON) = 50ffi(Max.) at. Vg1S=3V : r DS (OFF)= 100WQ(Min.) at. Vc i S =OV Low Gate Capacitance and Offset : CD = 2.5pF(Max.), J G =0. 3pF(Max. Contains Gates Protection Diode. 0S .39! 1AX ^Zfe.45MAX. Unit in mm 1O in 01.3 S5 1 f 19.01/ 00. 50 1fH T I I nz>o.