3SK38A
FEATURES
:
Ultra Small Drain-Source Thermoelectromotive Force : Vemf = 1.3 u V/°C (Typ
.
High Resistance Ratio : r DS (ON) = 50ffi(Max.) at. Vg1S=3V : r DS (OFF)= 100WQ(Min.) at. Vc i S =OV
Low Gate Capacitance and Offset : CD = 2.5p F(Max.), J G =0. 3p F(Max.
Contains Gates Protection Diode.
0S .39! 1AX ^Zfe.45MAX.
Unit in mm
1O in
S5
1 f
19.01/
00. 50
1f H
I nz>o.4t>
1 l| r~ P l
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Drain-Source Voltage Gate 1-Source Voltage Gate 2-Source Voltage Drain-Source Current Drain Power Dissipation Channel Temperature Storage Temperature Range
SYMBOL V DSS V C1SS V G2SS
L DS
PD Tch T stg
RATING 20
±12 -20
10 200 125
-65^ 125
UNIT V m A m W
°C °C
URCE ATE 1 3. DRA IN 4. GATE 2 (CASE)
Weight : l.lg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
Gate Leakage Current Drain Current Gate-Source Cut-off Voltage
SYMBOL X G1SS I G1SS r DSS VGS(0FF)
TEST CONDITION VG1S=12V, VG2S-0, VDS=0
VG13=12V,VG2S=0,VDS =o v Gl S=0,Vc2 s=0, v DS=6V...
