60N323
60N323 is Silicon N-Channel IGBT manufactured by Toshiba.
GT60N323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N323
Voltage Resonance Inverter Switching Application
Unit: mm
- diode included between emitter and collector
- Enhancement mode type
- High speed IGBT : tf = 0.19 μs (typ.) (IC = 60 A) diode : trr = 0.35 μs (max.) (di/dt =
- 200 A/μs)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics symbol
Rating
Unit
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
DC 1 ms
Diode forward current
DC 1 ms
Collector Power Dissipation (Tc = 25°C)
Junction Temperature
Storage Temperature
Screw Torque
VCES VGES
IC ICP IF IFP
Tj Tstg ⎯
1050 ±25 60 120 25 50
- 55~150
W °C °C N･m
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g...
