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TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
2SA1182
2SA1182
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications
Unit: mm
• Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA
• Complementary to 2SC2859.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −35 V
Collector-emitter voltage
VCEO −30 V
Emitter-base voltage
VEBO −5 V
Collector current
IC
−500
mA
Base current
IB −50 mA
Collector power dissipation
PC 150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g.
A1182 Datasheet
